tm november 2009 FFPF30UA60S 30 a, 600 v, ultrafast ll diode ?2009 fairchild semiconductor corporation FFPF30UA60S rev. a www.fairchildsemi.com 1 FFPF30UA60S features ? ultrafast recovery t rr = 90 ns (@ i f = 30 a) ? max forward voltage, v f = 2.2 v (@ t c = 25c) ? 600 v reverse voltage and high reliability ? avalanche energy rated ? rohs compliant applications ? boost diode in pfc and switching mode power supply ? welding, ups and motor control a pplication 30 a, 600 v, ultraf ast ll diode the FFPF30UA60S is a ultrafas t ll diode with low forward v oltage drop. this device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switc hing applications. it is specially suited for use in switching power supplies and industrial application. absolute maximum ratings t c =25 o c unless otherwise noted thermal characteristics t c =25 o c unless otherwise noted package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 43 o c 30 a i fsm non-repetitive peak surge current 60hz single half-sine wave 180 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 2.5 o c/w device marking device package reel size tape width quantity f30ua60s FFPF30UA60S to220f - - 50 pin assignments 1. cathode 2. anode to-220f-2l 1. cathode 2. anode
FFPF30UA60S 30 a, 600 v, ultrafast ll diode www.fairchildsemi.com 2 electrical characteristics t c =25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 30 a i f = 30 a t c = 25 o c t c = 125 o c - - - - 2.2 2.0 v i r 1 v r = 600 v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 150 a t rr i rr q rr i f = 30 a, di/dt = 200 a/s t c = 25 o c - - - - - - 90 8 360 ns a nc w avl avalan che energy ( l = 40 mh) 20 - - mj test circuit and waveforms notes: 1: pulse: test pulse width = 300 s, duty cycle = 2% ?2009 fairchild semiconductor corporation FFPF30UA60S rev. a
FFPF30UA60S 30 a, 600 v, ultrafast ll diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage figure 3.typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery current vs. di/dt figure 6. forward current derating curve 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 100 200 300 400 500 600 0.001 0.01 0.1 1 10 100 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i r [ a ] reverse voltage, v r [v] 100 200 300 400 500 40 80 120 160 200 t c = 125 o c i f = 30a t c = 25 o c t c = 75 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 0.1 1 10 100 0 50 100 150 200 capacitances , cj [pf] typical capacitance at 0v = 205pf reverse voltage, v r [v] 100 200 300 400 500 0 5 10 15 t c = 75 o c i f = 30a t c = 25 o c t c = 125 o c reverse recovery current, i rr [a] di/dt [ a/ s ] 25 50 75 100 125 150 0 10 20 30 40 average forward current, i f(av) [a] case temperature, t c [ o c ] ?2009 fairchild semiconductor corporation FFPF30UA60S rev. a
FFPF30UA60S 30 a, 600 v, ultrafast ll diode www.fairchildsemi.com 4 mechanical dimensions dimensions in millimeters to-220f 2l 2.54 0.2 0 0.80 0.10 0.35 0.10 2.76 0.2 0 max1.47 (1.00x45) (0.70) 3.30 0.10 15.87 0.20 (1.80) (6.50) 6.68 0.20 15.80 0.20 9.75 0.30 12.00 0.20 4.70 0.20 10.16 0.20 9.40 0.20 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 ?2009 fairchild semiconductor corporation FFPF30UA60S rev. a
www.fairchildsemi.com FFPF30UA60S 30 a, 600 v, ultrafast ll diode 5 ?2009 fairchild semiconductor corporation FFPF30UA60S rev. a
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